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| Pb Free Plating Product ISSUED DATE :2004/06/01 REVISED DATE :2005/01/28B GI01N60 Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 600V 8 1.6A The GI01N60 provide the designer with the best combination of fast switching. The through-hole version (TO-251) is available for low-profile applications and suited for AC/DC converters. *Dynamic dv/dt Rating *Simple Drive Requirement *Repetitive Avalanche Rated *Fast Switching Features Package Dimensions TO-251 REF. www..com A B C D E F Millimeter Min. Max. 6.40 6.80 5.20 5.50 6.80 7.20 7.20 7.80 2.30 REF. 0.60 0.90 REF. G H J K L M Millimeter Min. Max. 0.50 0.70 2.20 2.40 0.45 0.55 0.45 0.60 0.90 1.50 5.40 5.80 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current , VGS@10V Continuous Drain Current , VGS@10V Pulsed Drain Current 1, Symbol VDS VGS ID @TC=25 : ID @TC=100 : IDM PD @TC=25 : 2 Ratings 600 f 20 1.6 1 6 39 0.31 13 1.6 0.5 -55 ~ +150 Unit V V A A A W W/ mJ A mJ Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Operating Junction and Storage Temperature Range EAS IAR EAR Tj, Tstg Thermal Data Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Symbol Rthj-c Rthj-a Value 3.2 110 Unit /W /W GI01N60 Page: 1/5 ISSUED DATE :2004/06/01 REVISED DATE :2005/01/28B Electrical Characteristics(Tj = 25 Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Unless otherwise specified) Min. 600 2.0 Typ. 0.6 0.8 7.2 7.7 1.5 2.6 8 5 14 7 286 25 5 Max. 4.0 D 100 100 500 8.0 pF ns nC Unit V V/ : V S nA uA uA L Test Conditions VGS=0, ID=250uA Reference to 25 : , ID=1mA VDS=VGS, ID=250uA VDS=50V, ID=0.8A 20V VGS= D VDS=600V, VGS=0 VDS=480V, VGS=0 VGS=10V, ID=0.8A ID=1.6A VDS=480V VGS=10V VDD=300V ID=1.6A VGS=10V RG=10 L RD=187.5 L VGS=0V VDS=25V f=1.0MHz Symbol BVDSS BVDSS / Tj Gate Threshold Voltage Forward Transconductance Gate-Source Leakage Current Drain-Source Leakage Current(Tj=25 : ) Drain-Source Leakage Current(Tj=150 : ) VGS(th) gfs IGSS IDSS RDS(ON) Qg Qgs Qgd Td(on) Tr Td(off) Tf Ciss Coss Crss Static Drain-Source On-Resistance Total Gate Charge 3 Gate-Source Charge Gate-Drain ("Miller") Change Turn-on Delay Time Rise Time Turn-off Delay Time www..com 3 Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Source-Drain Diode Parameter Forward On Voltage 3 Symbol VSD IS ISM 1 Min. - Typ. - Max. 1.5 1.6 6 Unit V A A Test Conditions IS=1.6A, VGS=0V, Tj=25 : VD= VG=0V, VS=1.5V Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Notes: 1. Pulse width limited by safe operating area. 2. Staring Tj=25 : , VDD=50V, L=10mH, RG=25 L , IAS=1.6A. 3. Pulse width 300us, duty cycle 2%. GI01N60 Page: 2/5 ISSUED DATE :2004/06/01 REVISED DATE :2005/01/28B Characteristics Curve Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics www..com Fig 3. Normalized BVDSS v.s. Junction Temperature Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 5. Maximum Drain Current v.s. Case Temperature GI01N60 Fig 6. Type Power Dissipation Page: 3/5 ISSUED DATE :2004/06/01 REVISED DATE :2005/01/28B Fig 7. Maximum Safe Operating Area Fig 8. Effective Transient Thermal Impedance www..com Fig 9. Gate Charge Characteristics Fig 10. Typical Capacitance Characteristics Fig 11. Forward Characteristics of Reverse Diode GI01N60 Fig 12. Gate Threshold Voltage v.s. Junction Temperature Page: 4/5 ISSUED DATE :2004/06/01 REVISED DATE :2005/01/28B Fig 13. Switching Time Circuit Fig 14. Switching Time Waveform www..com Fig 15. Gate Charge Circuit Fig 16. Gate Charge Waveform Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the right to make changes to its products without notice. GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems. GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C. TEL : 886-3-597-7061 FAX : 886-3-597-9220, 597-0785 China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China TEL : 86-21-5895-7671 ~ 4 FAX : 86-21-38950165 GI01N60 Page: 5/5 |
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